PART |
Description |
Maker |
BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM 256×8 bit electrically erasable PROM 256?8 bit electrically erasable PROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
IS93C46-3 IS93C46-3G IS93C46-3GI IS93C46-3GR IS93C |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 1,024位串行电可擦除可编程ROM 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM 8k隆驴8 bit electrically erasable PROM
|
Rohm
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
BR24L16FVM-W BR24L16F-W BR24L16FV-W BR24L16FJ-W BR |
2k×8 bit electrically erasable PROM
|
Rohm
|
PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array 15ns programmable electrically erasable logic array Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers http://
|
IS25C08-2ZLI |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
INTEGRATED SILICON SOLUTION INC
|
M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
IS93C56 |
2048-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|